This document is a technical datasheet for the NEC 2SJ213, a P-channel vertical type MOS Field Effect Transistor (MOS FET) designed specifically for switching applications. The device features low on-state resistance and excellent switching characteristics, making it suitable for driving actuators such as motors, relays, and solenoids directly from a 5 V power supply.
| Drain to Source Voltage (Vdss) | -100 V |
|---|---|
| Gate to Source Voltage (Vgss) | -20 V |
| Drain Current (Continuous) (Idp) | -500 mA |
| On-State Resistance Rds(on) Max @ Vgs=-4.0V | 5.0 Ω |
| On-State Resistance Rds(on) Max @ Vgs=-10V | 4.2 Ω |
| Channel Temperature (Tch) | 150 °C |
The device is suitable for driving actuators such as motors, relays, and solenoids.
For wave soldering, the bath temperature should be below 260 °C with a time within 10 seconds.