The NEC 2SJ212 is a P-channel vertical type MOS Field Effect Transistor (MOS FET) specifically designed as a switching device. It features low on-state resistance and excellent switching characteristics, making it suitable for driving actuators such as motors, relays, and solenoids directly from ICs with a 5 V power source.
The document provides comprehensive electrical specifications including absolute maximum ratings, typical characteristics graphs, and derating factors. It also details recommended soldering conditions for surface mount types and lists application examples ranging from standard consumer electronics to special automotive and industrial uses.
| Drain to Source Voltage (Vdss) | -60 V |
|---|---|
| Gate to Source Voltage (Voess) | ±20 V |
| Drain Current (Ip(Dc)) | 500 mA |
| Total Power Dissipation (Pr) | 2.0 W |
| Channel Temperature (Tch) | 150 °C |
It is a switching device suitable for driving actuators such as motors, relays, and solenoids.
Yes, it can be driven directly by the output of ICs having a 5 V power source.
For infrared reflow, the package peak temp should be 230 °C with a time within 30 sec above 210 °C.