This document is a technical datasheet for the NEC 2SJ180, a P-channel vertical type MOS Field Effect Transistor (MOS FET) designed for high-speed switching applications. The device features low on-state resistance and includes an integrated bidirectional zener diode between the gate and source for protection.
| Drain to Source Voltage (Vdss) | -30 V |
|---|---|
| Gate to Source Voltage (Vgss) | +20 V |
| Drain Current (Continuous) (ID(oc)) | -10 A |
| Total Power Dissipation (Pd) | 1.0 W |
| Channel Temperature (Tch) Max | 150 °C |
It is suitable for driving actuators such as motors, relays, and solenoids.
Yes, it can be driven directly by ICs having a 5 V power supply.
Yes, it incorporates a bidirectional zener diode between the gate and source.