This document describes the features and characteristics of SPP02N60S5 and SPB02N60S5 Cool MOS power transistors, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, optimized capacitances, improved noise immunity, and more.
This document is a technical datasheet for the Infineon Technologies AG Cool MOS™ Power-Transistor models SPPO2N60S5 and SPBO2N60S5. It highlights new revolutionary high-voltage technology, ultra-low gate charge, periodic avalanche rating, and extreme dv/dt ratings.
| Continuous drain current (Tc=25°C) | 1.8 A |
|---|---|
| Drain-source breakdown voltage | 600 V |
| Thermal resistance junction-case (RthJC) | 5 K/W |
The device supports a continuous drain current of 1.8 A at 25 °C and 1.1 A at 100 °C.
The maximum rated power dissipation is 25 W when the case temperature is 25 °C.
The device can operate or be stored within a range of -55 to +150 °C.