The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
This document is a technical datasheet for the NEC 2SJ625, a P-Channel MOS Field Effect Transistor intended for switching applications. The device features a low on-state resistance and supports direct driving by a 1.8 V power source, making it suitable for portable machines.
| Total Power Dissipation Pt | 1.25 W |
|---|
The maximum total power dissipation is 1.25 W.
The maximum DC drain current is +3.0 A.
The device can be driven directly by a 1.8 V power source.