The µPA836TF is a silicon transistor with two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. Q1 and Q2 have low noise and high gain.
The NEC uPA836TF is an NPN silicon epitaxial transistor designed for low noise amplification in the VHF band to UHF. It integrates two different transistors, Q1 and Q2, on a single chip within a 6-pin thin-type small mini mold package.
Q1 provides high gain with a typical Noise Figure (NF) of 1.5 dB at 2 GHz under specific conditions, while Q2 offers lower noise performance with an NF of 1.7 dB. The device is available in loose products or taping formats and requires caution regarding electrostatic discharge due to its high-frequency process.
| Package Type | 6-pin thin-type small mini mold package |
|---|---|
| Transistor Count | 2 different transistors on-chip |
| Total Power Dissipation (2 elements) | 200 mW |
| Junction Temperature | -65 to +150 °C |
The typical Noise Figure (NF) for Q1 is 1.5 dB at f = 2 GHz, VcE=3 V, and Ic=3mA.
The typical Noise Figure (NF) for Q2 is 1.7 dB at f = 2 GHz, VcE=1V, and Ic=3mA.
The maximum junction temperature (Ti) is 150 °C.