CMSD2836 and CMSD2838 are ultra-high speed silicon switching diodes, manufactured by the epitaxial planar process, in an epoxy molded SUPERmini™ surface mount package, designed for high speed switching applications.
The document describes the CENTRAL SEMICONDUCTOR CMSD2836 and CMSD2838 types as ultra-high speed silicon switching diodes manufactured by the epitaxial planar process. These devices are housed in an epoxy molded SUPERmini surface mount package designed for high speed switching applications.
| Peak Repetitive Reverse Voltage | 75 V |
|---|---|
| Average Forward Current | 200 mA |
| Peak Forward Current | 300 mA |
| Power Dissipation | 250 mW |
| Operating and Storage Junction Temperature | -65 to +150 °C |
| Thermal Resistance | 500 °C/W |
The CMSD2836 uses marking code A2C, while the CMSD2838 uses marking code A6C.
The typical forward voltage (VF) is 1.0 V when the forward current (IF) is 10mA.