CMSD7000 is a ultra-high speed silicon switching diode from CENTRAL SEMICONDUCTOR, manufactured by the epitaxial planar process, in an epoxy molded super-mini surface mount package, connected in a series configuration, designed for high speed switching applications.
The document describes the CENTRAL SEMICONDUCTOR CMSD7000 type as ultra-high speed silicon switching diodes manufactured using an epitaxial planar process. These devices are housed in an epoxy molded super-mini surface mount SOT-323 package and feature a series configuration designed for high-speed switching applications.
| Peak Repetitive Reverse Voltage | 100 V |
|---|---|
| Average Forward Current | 200 mA |
| Peak Forward Current | 500 mA |
| Power Dissipation | 250 mW |
| Operating and Storage Junction Temperature Range | -65 to +150 °C |
| Thermal Resistance (JA) | 500 °C/W |
| Reverse Leakage Current (VRRM=100V) | 500 nA |
The maximum peak repetitive reverse voltage is 100 V.
The device operates and stores between -65°C and +150°C.