This document describes the features and characteristics of the CENTRAL SEMICONDUCTOR CMSD4448 ultra-high speed silicon switching diode, designed for high speed switching applications.
The document describes the Central Semiconductor CMSD4448, an ultra-high speed silicon switching diode manufactured using the epitaxial planar process. It is housed in a super-mini surface mount package (SOT-323) designed for high-speed switching applications.
The datasheet lists maximum ratings such as a continuous reverse voltage of 75V and power dissipation of 250mW at 25°C. Electrical characteristics include forward voltage drop, reverse leakage current, and capacitance values under specific test conditions.
| Continuous Reverse Voltage | 75 V |
|---|---|
| Peak Repetitive Reverse Voltage | 100 V |
| Continuous Forward Current | 250 mA |
| Peak Repetitive Forward Current | 250 mA |
| Forward Surge Current (tp=1ms) | 4000 mA |
| Power Dissipation | 250 mW |
| Operating and Storage Temperature Range | -65 to +150 °C |
The maximum continuous reverse voltage is rated at 75 V.
The maximum power dissipation is 250 mW.