CMSD2004S is a high voltage switching diode produced by Central Semiconductor, manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.
The document describes the Central Semiconductor Corp. CMSD2004S, a silicon switching diode manufactured using the epitaxial planar process. It is designed for applications requiring high voltage capability and is available in SOT-323 case configurations.
The datasheet lists maximum ratings such as a continuous reverse voltage of 240 V and peak repetitive forward current of 625 mA. It also details electrical characteristics including reverse leakage current, forward voltage drop, capacitance, and reverse recovery time.
| Continuous Reverse Voltage (VR) | 240 V |
|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 300 V |
| Continuous Forward Current (IF) | 225 mA |
| Power Dissipation (PD) | 250 mW |
| Junction Temperature Range (Tj) | -65 to +150 °C |
The maximum continuous reverse voltage is 240 V.
The maximum power dissipation is 250 mW.