This document describes a CMOS SDRAM product called K4S643232E, which has high data transfer rate, synchronous design, programmable burst length and latency, and is suitable for high bandwidth, high performance memory system applications.
The document describes the K4S643232E, a 67Mbit CMOS SDRAM organized as 4 x 524,288 words by 32 bits. It is fabricated with Samsung's high-performance technology and supports synchronous operation with precise cycle control using a system clock.
Key features include support for 3.3V power supply (LVTTL compatible), four banks of operation, programmable CAS latency (2 & 3) and burst length (1 to Full page). The device allows I/O transactions on every clock cycle and supports auto/self-refresh modes.
| Organization | 512K x 32bit x 4 Banks |
|---|---|
| Operating Frequency | 143MHz to 222MHz (depending on speed grade) |
| Interface | LVTTL |
| Package Type | TSOP (II) |
The K4S643232E-TCIL45 part operates at a maximum frequency of 222MHz.
The K4S643232E requires a power supply of 3.3V.