This document describes the maximum ratings and electrical characteristics of a single 300A 1200V IGBT module.
This document is a technical datasheet for the Nihon Inter Electronics Corporation PHMB300B12 IGBT Module. It provides detailed specifications for a single-phase device rated at 300A collector current and 1200V collector-emitter voltage.
The text outlines maximum ratings, electrical characteristics such as saturation voltage and switching times, free-wheeling diode ratings, and thermal impedance values. The document also includes typical application curves for Vce vs Ic and Vge vs Ig under various temperature conditions. This manual is written in Japanese.
| Collector-Emitter Voltage (Vceo) | 1200 V |
|---|---|
| Gate-Emitter Voltage (Vges) | -20 V |
| Collector Current DC (Ic) | 300 A |
| Collector Power Dissipation (Pc) | 1600 W |
| Junction Temperature Range | +40 to +150 C |
| Storage Temperature Range (Ts) | 0 to +125 C |
The collector power dissipation is rated for a maximum of 1600 W.