This document describes the features and characteristics of the SBD module P2H30QH10, including compatibility with Isolated Base SOT227, dual separated diodes, extremely low forward voltage drop, low power loss, high efficiency, and high surge capability. Typical applications include high frequency rectification.
The P2H30QH is a 30 A, 100 V Schottky Barrier Diode (SBD) module designed for high‑frequency rectification and high‑efficiency power conversion. It features dual separated diodes, extremely low forward voltage drop, and high surge capability.
Key specifications include a peak forward voltage of 1.0 V, average rectified output current of 30 A, surge forward current of 150 A, and an isolation voltage of 2500 V. The module operates from –40 °C to +150 °C (junction) and is rated for a net weight of 35 g.
| Repetitive Peak Reverse Voltage | 100 V |
|---|---|
| Isolation Voltage (Base Plate to Terminals) | 2500 V |
| Operating Junction Temperature Range | -40 to +150 °C |
| Storage Temperature Range | -40 to +125 °C |
| Approximate Net Weight | 35 g |
The isolation voltage is rated at 2500 V.