This document describes the maximum ratings, net weight, electrical characteristics, and thermal characteristics of the GSH05A09B product. The product features low forward voltage drop, low power loss, high efficiency, and high surge capability.
The GSH0 SH055A0 A09B is a single‑chip silicon power device in a TO‑220AB‑like case. It features low forward voltage drop, low power loss, high efficiency, and high surge capability.
Key specifications include a repetitive peak reverse voltage of 90 V, forward current of 7.85 mA, operating junction temperature from –40 °C to +150 °C, and a recommended mounting torque of 0.5 N·m. The datasheet also lists thermal resistance, peak reverse current, and typical forward voltage. This manual is written in Japanese.
| Repetitive Peak Reverse Voltage (VRRM) | 90 V |
|---|---|
| Forward Current (IRMS) | 7.85 mA |
| Operating Junction Temperature Range (Tj) | -40 to +150 °C |
| Storage Temperature Range (Tst) | -40 to +150 °C |
| Mounting Torque | 0.5 N·m |
| Thermal Resistance (Rthj‑c) | 2 °C/W |
| Approximate Net Weight | 1.9 g |
| Peak Reverse Current (IRM) | 1 mA |
| Peak Forward Voltage (Vf) | 0.85 V |
The device is rated for a repetitive peak reverse voltage of 90 V.
A torque of 0.5 N·m is recommended for mounting.
It can operate from –40 °C to +150 °C (junction temperature).
The typical forward voltage is 0.85 V.