This document is a technical datasheet for the International Rectifier IRF634 HEXFET Power MOSFET. It describes the device as part of the Third Generation HEXFET series, designed to offer fast switching, ruggedized design, low on-resistance, and cost-effectiveness. The component is available in the TO-220 package.
| Power Dissipation | 74 W |
|---|---|
| Single Pulse Avalanche Energy | 300 mJ |
| Operating Junction Temperature Range | -55 to +150 °C |
| Drain-to-Source Breakdown Voltage | 250 V |
| Static Drain-to-Source On-Resistance | 0.45 Ohms |