BF 550 G is a PNP silicon RF transistor manufactured by Texas Instruments, suitable for RF amplifier circuits below 300MHz. It has the characteristics of low feedback capacitance and low output conductance.
This document is a technical datasheet for the Siemens BF 550, a PNP silicon RF transistor designed for common emitter amplifier stages up to 300 MHz and mixer applications in AM/FM radios. The device features low feedback capacitance due to shield diffusion and controlled low output conductance.
| Collector-emitter voltage (Veceo) | 40 V |
|---|---|
| Collector current (Ic) | 25 mA |
| Total power dissipation (Prot) | 280 mW |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (ft) | 350 MHz |
| DC current gain (hre) | 50 to 250 |
It is designed for common emitter amplifier stages up to 300 MHz and for mixer applications in AM/FM radios and VHF TV tuners.
The maximum total power dissipation is 280 mW when the ambient temperature is below 25 °C.