This document describes the NPN-Silicon-Phototransistor product from the BPY 62 Semiconductor Group. The product is specifically designed for applications in the range of 420 nm to 1130 nm, with high linearity and hermetically sealed metal package suitable for up to 125 °C. It is suitable for photointerrupters, industrial electronics, and control circuits.
This document is a technical datasheet for the Siemens BPY 62, an NPN silicon phototransistor available in hermetically sealed metal TO-18 packages. It is designed for applications involving light barriers and industrial electronics within a wavelength range of 420 nm to 1130 nm.
| Collector-emitter voltage | 50 V |
|---|---|
| Collector current | 100 mA |
| Total power dissipation | 200 mW |
It is especially suitable for applications from 420 nm to 1130 nm.
It uses a hermetically sealed metal package (TO-18) with base connection.