This document presents the maximum ratings and electrical characteristics of the semiconductor components SMBTA 55 and SMBTA 56. These PNP silicon AF transistors feature high breakdown voltage and low collector-emitter saturation voltage.
This document is a technical datasheet from Siemens Semiconductor Group covering the SMBTA 55 and SMBTA 56 models of PNP Silicon AF Transistors. The devices are characterized by high breakdown voltage and low collector-emitter saturation voltage.
The datasheet provides comprehensive electrical characteristics including DC parameters such as collector-emitter breakdown voltage, current gain (hFE), and saturation voltages. It also details AC characteristics like transition frequency and output capacitance, along with maximum ratings for power dissipation and temperature ranges.
| Device Type | PNP Silicon AF Transistors |
|---|---|
| Complementary Types | SMBTA 05, SMBTA 06 (NPN) |
| Collector-emitter voltage Vceo | 60 V (SMBTA 55), 80 V (SMBTA 56) |
| Collector current Ic | 500 mA |
| Total power dissipation Ptot (Ts = 79 °C) | 330 mW |
| Junction temperature Tj | 150 °C |
The complementary types are SMBTA 05 and SMBTA 06, which are NPN transistors.
The maximum continuous collector current (Ic) is 500 mA.