SFH 521 and SFH 521 A are two α-β-γ radiation detectors. They have low dark current, low capacitance and high breakdown voltage, suitable for fully depleted chip operation.
This document is a technical datasheet for the Siemens SFH 521 and SFH 521A, which are beta-gamma radiation detectors. The devices utilize a substrate with specific resistivity and feature an aluminum contact on the topside and gold/arsenic on the backside.
Key characteristics include low dark current and capacitance, allowing for operation at full depletion due to high breakdown voltage. The datasheet provides detailed electrical specifications such as forward voltage, operating voltage range, and charge carrier lifetime.
| Substrate resistivity | 4600 + 1400 Qcm |
|---|---|
| Chip thickness | 38-145um |
| Topside contact | Aluminium contact 1.4 um |
| Backside coating | 0.4 um Au/As |
| Operating voltage range | 90 ... 120 V |
The active area of the diode measures 10x10 mm.