Siemens HYB3164800AJ/AT(L) 8M x 8-DRAM Datasheet

HYB 3164800AJ/AT(L) -40/-50/-60 is a 64 MBit dynamic RAM organized as 8,388,608 by 8 bits. The device is fabricated in an advanced second generation process and features low power, high performance, low voltage and high reliability.


Siemens HYB3164800AJ/AT(L) 8M x 8-DRAM Datasheet - cover page
Brand
Siemens
Category
Memory
Document type
Datasheet
Language
English
Pages
26
File format
PDF
File size
254 KB
Published
06 June, 2012
Updated
30 September, 2023
MD5 checksum
1873DF3F6AABC788899E3F4F180CDFFD

About this manual

This document is a technical datasheet for the Siemens HYB3164(5)800AJ/AT(L)-40/-50/-60 series of 8M x 8-bit Dynamic RAMs. The devices are fabricated using advanced second-generation 64 Mbit CMOS silicon gate process technology and operate with a single +3.3V power supply.

What's inside

  • Performance
  • Ordering Information
  • Pin Names
  • Truth Table
  • Block Diagram
  • Absolute Maximum Ratings
  • DC Characteristics

Specifications

Organization8M x 8-bit (64 MBit)
Operating Temperature0 to 70 °C
Power Supply Voltage+3.3V (+/-0.3V)
Access Time (40ns version)40 ns
Package TypeP-SOJ-32-1 or P-TSOPII-32-1
Refresh Cycles (HYB 3164)8192 cycles/128 ms

Frequently asked questions

What is the operating voltage for this DRAM?

The device operates with a single +3.3V power supply.

Does the L-version support self-refresh mode?

Yes, the HYB 3165800AT(L) parts have a sleep mode supported by Self Refresh.

What is the maximum active power dissipation?

The maximum active power dissipation is 396 mW for the HYB 3164800AJ-40 version.

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