The IDT7188 is a 65,536-bit high-speed static RAM organized as 16K x 4. It is fabricated using IDT’s high-performance, high-reliability technology — CMOS. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications. Access times as fast as 25ns are available. The IDT7188 offers a reduced power standby mode, ISB1, which is activated when CS goes HIGH. This capability significantly decreases power while enhancing system reliability. The low-power version (L) version also offers a battery backup data retention capability where the circuit typically consumes only 30µW operating from a 2V battery. All inputs and outputs are TTL-compatible and operate from a single 5V supply. The IDT7188 is packaged in a 22-pin, 300 mil ceramic DIP providing excellent board-level integration and reliability.
This document is a technical datasheet for the IDT7188S and IDT7188L series of 65,536-bit high-speed static RAMs. These devices are organized as 16K x 4 and fabricated using advanced CMOS technology to provide cost-effective solutions for memory-intensive applications.
| Capacity | 64K (16K x 4-Bit) |
|---|---|
| Package Type | 22-pin, 300 mil ceramic DIP |
| Read Cycle Time (Min) | 25ns to 85ns |
| Power Dissipation | 1.0 W |
The device is a 65,536-bit high-speed static RAM organized as 16K x 4.
Yes, the L version offers battery backup data retention capability where the circuit typically consumes only 30pW operating from a 2V battery.
Yes, all inputs and outputs are TTL-compatible and operate from a single 5V supply.