The DSC-5621/3 is a dual-port synchronous dynamic random access memory (SRAM) device from IDT that supports 3.3V and 2.5V power supplies and is available in 128-pin Thin Quad Flatpack, 208-ball fine pitch Ball Grid Array and 256-ball Ball Grid Array packages. The device features a high-performance 6T SRAM structure and has 10/12/15ns (max.) high-speed access speeds, allowing for simultaneous access to the same memory location. DSC-5621/3 supports JTAG and operates in the industrial temperature range (–40°C to +85°C).
The IDT70V639S is a high-speed 3.3V 128K x 18 Asynchronous Dual-Port Static RAM designed for use as a stand-alone memory or as part of a MASTER/SLAVE configuration for systems requiring 36-bit or wider words. It features true dual-port memory cells allowing simultaneous access to the same location and supports JTAG features compliant to IEEE 1149.1, though this is not supported on the 128-pin TQFP package due to limited pin count.
The device provides two independent ports with separate control signals for asynchronous read or write operations to any memory location. It includes an automatic power-down feature controlled by chip enable pins and supports selectable operating voltages of either 3.3V or 2.5V on one or both ports, while the core remains at 3.3V.
| Memory Size | 128K x 18 |
|---|---|
| Voltage (Commercial) | 3.3V |
| Operating Speeds (Commercial) | 10/12/15ns |
| Operating Speeds (Industrial) | 12/15ns |
| Temperature Range (Industrial) | -40°C to +85°C |
Yes, the device can support an operating voltage of either 3.3V or 2.5V on one or both ports.
Commercial versions have a maximum access time of 15ns, while industrial versions have a maximum access time of 15ns.
The package body measures approximately 15mm x 15mm x 1.4mm with a 0.8mm ball pitch.