2N718A, 2N1613, 2N1613L are NPN low power silicon transistors with a maximum rating of 30Vdc, 500mAdc, 0.5W, and a working temperature range of -55°C to 175°C.
This document provides technical specifications for the Microsemi 2N1613, 2N718A, and 2N1613L series of NPN low power silicon transistors. The devices are qualified per MIL-PRF-19500/181 at JAN, JANTX, and JANTXV levels.
| Collector-Emitter Voltage (Veceo) | 30 Vdc |
|---|---|
| Collector-Base Voltage (Veso) | 75 Vdc |
| Emitter-Base Voltage (Veso) | 7.0 Vdc |
| Collector Current (Tc) | 500 mA |
| Total Power Dissipation @ Ta = 25°C | 0.8 W |
| Operating & Storage Junction Temperature Range | -55 to +175 °C |
The minimum Collector-Emitter Breakdown Voltage (Vceo) is 30 Vdc when Ic = 30 mA.
The devices are qualified per MIL-PRF-19500/181 at JAN, JANTX, and JANTXV levels.
The maximum Thermal Resistance, Junction-to-Case (Rac) is 58 °C/W.
The available packages include TO-18 (TO-206AA), TO-39 (TO-205AD), and TO-5.