AS7C1024B 5V 128K X 8 CMOS SRAM is a high-performance, low-power CMOS SRAM. It has a storage capacity of 131,072 words x 8 bits and can complete read operations in 5/6/7/8 ns. The memory is manufactured using 6T 0.18u CMOS process and has 32-pin JEDEC standard package, which can meet the needs of various applications.
The AS7C1024B is a high‑performance 5 V CMOS static RAM organized as 131,072 words × 8 bits, offering fast address access times (10‑20 ns) and low power consumption. It supports active and standby modes with latch‑up current as low as 55 mW in standby.
The device is offered in several JEDEC‑standard packages, including 32‑pin SOJ (300 mil and 400 mil) and 32‑pin TSOP (8 × 20 mm and 8 × 13.4 mm). Detailed timing specifications, absolute maximum ratings, and recommended operating conditions are provided for both commercial and industrial temperature ranges.
| Organization | 131,072 words × 8 bits |
|---|---|
| Address access time | 10‑20 ns |
| Output enable access time | 5‑8 ns |
| Active power consumption | 605 mW @ 10 ns |
| Standby power consumption | 55 mW |
| Supply voltage (Vcc) | 4.5 V – 5.5 V |
The maximum CMOS standby current is 10 mA.
The device should be powered with a supply voltage between 4.5 V and 5.5 V.