This document describes the features of the PMGD8000LN Dual µTrenchMOS™ logic level FET, including the use of TrenchMOS™ technology, fast switching, and logic level compatibility.
The PMGD8000LN is a dual N‑channel enhancement mode TrenchMOS™ logic‑level FET offered in a plastic SOT363 (SC‑88) package. It is intended for high‑speed switching, battery management, and low‑power DC‑DC converter applications.
The document lists key electrical parameters such as a 30 V drain‑source voltage rating, 125 mA continuous drain current, 0.2 W maximum power dissipation, and a junction temperature range up to 150 °C, along with thermal resistance, capacitance, and characteristic curves.
| Junction temperature max | 150 °C |
|---|---|
| Storage temperature range | -55 °C to +150 °C |
| Package | SOT363 (SC‑88) |
It is supplied in a plastic SOT363 (SC‑88) surface‑mount package.