MMST6427 is an NPN surface mount Darlington transistor with epitaxial planar die construction. It is ideal for medium power amplification and switching applications, featuring high current gain and an ultra-small surface mount package.
The MMST6427 is an NPN surface‑mount Darlington transistor designed for medium‑power amplification and switching. It features high current gain, an ultra‑small SOT‑323 package, and a UL‑94V‑0 rated plastic case.
The document provides detailed electrical characteristics such as collector‑base, collector‑emitter, and emitter‑base breakdown voltages, continuous collector current, power dissipation, thermal resistance, and DC current gain, as well as mechanical data, ordering information, and marking codes. This manual is written in Chinese.
| Collector‑Base Voltage (V_CBO) | 40 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | 40 V |
| Emitter‑Base Voltage (V_EBO) | 12 V |
| Continuous Collector Current (I_C) | 500 mA |
| Power Dissipation (P_D) | 200 mW |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 625 K/W |
| Package | SOT‑323 molded plastic |
| Weight | 0.006 g (approx.) |
| DC Current Gain (h_FE) | 10,000 – 200,000 |
| Output Capacitance (C_obo) | 8.0 pF (typical) |
The collector‑emitter breakdown voltage is rated at 40 V.
It is supplied in a SOT‑323 molded‑plastic surface‑mount package.
The DC current gain (h_FE) ranges from about 10 000 up to 200 000 depending on test conditions.
Moisture sensitivity is Level 1 per J‑STD‑020A.