HARRIS IRF220 IRF221 IRF222 IRF223 4.0A 5.0A 150V 200V 0.8 1.2 Ohm N-Channel Power MOSFETs handbook

Update: 29 September, 2023

This document describes four N-channel enhancement mode power field effect transistor products, which have current ratings of 4.0A and 5.0A, voltage ratings of 150V and 200V, resistances of 0.8 and 1.2 ohms, nanosecond switching speeds, linear transfer characteristics, high input impedance, and can be operated directly from integrated circuits.

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MD5 Checksum: 690D3C366C5F592ED3324349F13935B5

Publication date: 04 June, 2012

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PDF Link: HARRIS IRF220 IRF221 IRF222 IRF223 4.0A 5.0A 150V 200V 0.8 1.2 Ohm N-Channel Power MOSFETs handbook PDF