This document describes four N-channel enhancement mode power field effect transistor products, which have current ratings of 4.0A and 5.0A, voltage ratings of 150V and 200V, resistances of 0.8 and 1.2 ohms, nanosecond switching speeds, linear transfer characteristics, high input impedance, and can be operated directly from integrated circuits.
The Harris IRF220‑IRF223 series are N‑Channel enhancement mode silicon‑gate power MOSFETs designed for high‑speed switching applications such as regulators, motor drivers and relay drivers. The devices are offered in JEDEC TO‑204AA (TO‑220) packages and feature low on‑resistance, fast switching times and high input impedance.
The datasheet provides absolute maximum ratings, electrical specifications, typical performance curves, capacitance data, thermal resistance values and recommended test circuits. It also includes handling precautions such as ESD sensitivity and recommended soldering temperatures.
| Maximum Power Dissipation (PD) | 40 W |
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