This document introduces the radiation-hardened N-channel power MOSFETs, models 2N7288D, 2N7288R, and 2N7288H, produced by Harris Corporation in 1992. These devices have a rating of 9A and 250V, with an RDS(on) value of 0.415Ω. They meet the pre-radiation specifications up to 100KRAD(Si) and can be used up to 3000KRAD(Si) with limited performance.
The document describes the Harris Semiconductor Sector's second-generation hardened power MOSFETs, available in D, R, and H variants. These devices are designed with a vertical DMOS (VDMOS) structure to exhibit minimal characteristic changes under total dose (gamma), neutron, heavy ion, and dose rate exposures.
The datasheet provides absolute maximum ratings, pre-radiation electrical specifications, and post-radiation performance data for the 2N7288D, 2N7288R, and 2N7288H models. It includes typical performance characteristics graphs regarding clamped inductive switching failure onset and safe operating area curves.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current | 9 A |
| On Resistance (RDS(on)) | 0.415 Ohm |
| Package Type | TO-257AA |
| Operating Temperature Range | -55 to +150 C |
The maximum continuous drain current is 9A.
The devices are supplied in a TO-257AA package.