Update: 28 September, 2023
This document describes the features and characteristics of P-Channel enhancement mode power field effect transistors. They have rated currents and voltages of -5.5A and -6.5A, -150V and -200V, with rDS(ON) values of 0.8Ω and 1.2Ω. They have nanosecond switching speeds, linear transfer characteristics, and high input impedance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
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MD5 Checksum: 3F441D3B7BD5DE7330776A9A681A90F3
Publication date: 05 June, 2012
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PDF Link: HARRIS IRF9230 IRF9231 IRF9232 IRF9233 handbook PDF