This document describes the features and characteristics of P-Channel enhancement mode power field effect transistors. They have rated currents and voltages of -5.5A and -6.5A, -150V and -200V, with rDS(ON) values of 0.8Ω and 1.2Ω. They have nanosecond switching speeds, linear transfer characteristics, and high input impedance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
This document provides technical specifications and performance data for the IRF9230, IRF9231, IRF9232, and IRF9233 P-Channel Power MOSFETs. These devices are designed as advanced power transistors capable of withstanding specified energy levels in breakdown avalanche mode operation.
| Drain to Source Breakdown Voltage (IRF9230, IRF9232) | -200 V |
|---|---|
| Drain to Source Breakdown Voltage (IRF9231, IRF9233) | -150 V |
| On-State Drain Current (IRF9232, IRF9233) | -6.5 A |
| Drain to Source On Resistance (IRF9232, IRF9233) | 1.2 Ohm |
| Operating and Storage Temperature Range | -55 to 150 °C |
These devices are designed for switching regulators, switching converters, motor drivers, and relay drivers.
Yes, these types can be operated directly from integrated circuits.