IRF244, IRF245, IRF246, IRF247 are N-Channel enhancement mode silicon gate power field effect transistors, features include 14A and 13A, 275V and 250V, rDS(ON) = 0.28Ω and 0.34Ω, Single Pulse Avalanche Energy Rated, SOA is Power Dissipation Limited, Nanosecond Switching Speeds, Linear Transfer Characteristics, High Input Impedance, 275V, 250V DC Rated - 120V AC Line System Operation
This document provides technical specifications for the Harris IRF244, IRF245, IRF246, and IRF247 N-Channel enhancement mode silicon gate power field effect transistors. These devices are designed for applications such as switching regulators, switching converters, motor drivers, and relay drivers, capable of withstanding specified levels of energy in the breakdown avalanche mode of operation.
| Continuous Drain Current | 14A (IRF244, IRF246) / 13A (IRF245, IRF247) |
|---|---|
| Drain to Source Voltage | 275V (IRF246, IRF247) / 250V (IRF244, IRF245) |
| On-State Drain Current | 14A (IRF244, IRF246) / 13A (IRF245, IRF247) |
| On-State Drain Resistance | 0.28 Ohm (IRF244, IRF246) / 0.34 Ohm (IRF245, IRF247) |
| Maximum Power Dissipation | 125 W |
| Operating Temperature | -55 to 150 °C |
| Package Type | TO-204AA |
They are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors.
Yes, these types can be operated directly from integrated circuits.
The single pulse avalanche energy rating is 550 J for all listed models.