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This document describes the Harris Semiconductor Sector's second-generation radiation-hardened power MOSFETs. The devices are available as 2N7330D, 2N7330R, or 2N7330H variants and feature a vertical DMOS structure designed for minimal characteristic changes under total dose (gamma) and neutron exposures.
The datasheet provides pre-radiation electrical specifications at +25°C and post-irradiation specifications for gamma doses up to 1000KRAD(SI). It includes data on breakdown voltage, threshold voltage, leakage currents, on-resistance, switching times, and safe operating areas. The document also details survival characteristics against heavy ions (SEE) and dose rate effects.
| Drain-Source Voltage | -200 V |
|---|---|
| Continuous Drain Current (ID) | 26 A |
| Operating and Storage Temperature | -55 to +150 °C |
| Drain-Source On Resistance (RDS(on)) | 0.200 Ω |
| Gate-Threshold Voltage (VGS(th)) | -2.0 to -4.0 V |
The maximum continuous drain current is 26 A.
The device operates and stores between -55°C and +150°C.