This is a PDF document. It provides a list of suppliers for 2N7331D.
This document is a technical datasheet for the Harris Semiconductor 2N7331 series of second-generation radiation-hardened N-channel power MOSFETs. The devices are designed to withstand total ionizing dose (gamma) up to 1000KRAD(Si), neutron exposure, and heavy ion single event effects.
The datasheet provides pre-radiation and post-radiation electrical specifications for the D, R, and H variants, including breakdown voltage, threshold voltage, on-resistance, and switching times. It also includes typical performance characteristics graphs regarding temperature, inductive switching, and neutron fluence.
| Drain-Source Voltage | -200 V |
|---|---|
| Continuous Drain Current (Tc = +25°C) | 19 A |
| Package Type | TO-258AA Hermetic Metal Package |
The devices offer total dose hardness at 100KRAD(Si) and 1000KRAD(Si).
The series includes the 2N7331D, 2N7331R, and 2N7331H variants.
The typical drain-source on resistance is 0.210 Ohms.