The Harris 2N7323 series are radiation‑hardened P‑channel power MOSFETs offered in D, R, and H variants. They are designed for high‑reliability applications, featuring up to 23 A continuous drain current, 125 W maximum power dissipation, and on‑state resistance as low as 0.140 Ω.
The datasheet provides electrical specifications, absolute maximum ratings, typical performance curves, and package dimensions for hermetic metal TO‑254AA packages. Contact information for Harris Semiconductor sales offices worldwide is also included.
| Pulsed Drain Current (ID,pulse) | 69 A |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |