This datasheet introduces the parameters of 600V N-channel MOSFET FQB10N60C / FQI10N60C, including rated voltage, rated current, on-state resistance, gate capacitance, switching speed, etc.
The Fairchild FQB10N60C and FQI10N60C are N‑Channel enhancement mode power MOSFETs built with planar stripe DMOS technology. They are designed for high‑efficiency switched‑mode power supplies, active power factor correction, and electronic lamp ballasts.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, switching performance, and package dimensions for the D‑PAK and I‑PAK variants, along with trademark and disclaimer information.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 9.5 A |
| Pulsed Drain Current (ID,pulse) | 38 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) typical | 0.732 Ω @ VGS=10 V |
| Gate Charge (Qg) typical | 44 nC |
| Reverse Transfer Capacitance (Crss) typical | 18 pF |
| Power Dissipation @ 25 °C | 3.13 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.8 °C·W⁻¹ |
The maximum drain‑source voltage is 600 V.
It can handle a continuous drain current of 9.5 A at 25 °C.
The typical gate charge is 44 nC.
The on‑resistance is about 0.732 Ω at VGS = 10 V.