2SA1128 is a silicon PNP epitaxial planar type transistor for low-frequency output amplification. It features low collector to emitter saturation voltage VCE(sat) and optimum for low-voltage operation and for converter circuits.
The 2SA1128 is a silicon PNP epitaxial planar transistor designed for low‑frequency output amplification and low‑voltage operation, suitable for converter circuits. It is supplied in a JEDEC TO‑92 package.
Key electrical characteristics include a collector‑to‑base voltage of –25 V, collector‑to‑emitter voltage of –20 V, peak collector current of 1 A, and a transition frequency of up to 150 MHz. The device can dissipate up to 600 mW and operates over a storage temperature range of –55 °C to +150 °C.
| Emitter to base voltage (Vebo) | 7 V |
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It is supplied in a JEDEC TO‑92 package.