DTD113ZK/DTD113ZU are ROHM's digital transistors with integrated resistors, which can be used in inverter, interface and driver circuits
The DTD113ZK and DTD113ZU are NPN epitaxial planar silicon digital transistors with built‑in bias resistors, designed for inverter, interface, and driver applications. The built‑in resistors simplify circuit design by eliminating the need for external input resistors and reducing parasitic effects.
The devices are offered in SMT3 and UMT3 tape‑and‑reel packages, each with a basic ordering unit of 3000 pieces. Key electrical parameters include a 50 V supply rating, 500 mA output current, and a transition frequency of 200 MHz. Detailed absolute maximum ratings, electrical characteristics, and characteristic curves are provided for design reference.
| Supply voltage (VEO) | 50 V |
|---|---|
| Input voltage (VIN) | -5 to +10 V |
| Output current (IE) | 500 mA |
| Power dissipation (PP) | 200 mW |
| Junction temperature (TJ) | 150 °C |
| Transition frequency (fT) | 200 MHz |
| DC current gain (hFE) | 82 |
| Input resistance (RI) | 0.07–13 kΩ |
They are suitable for inverter, interface, and driver circuits.
They are offered in SMT3 and UMT3 tape‑and‑reel packages.
The devices can handle up to 50 V supply voltage.
The transition frequency is specified as 200 MHz.