This document describes the features and characteristics of ROHM's DTD523YE / DTD523YM 500mA / 12V low VCE (sat) digital transistors (with built-in resistors), including lower VCE (sat), built-in bias resistors, structure, and packaging specifications.
The DTD523YE and DTD523YM are low‑VCE(sat) NPN digital transistors that incorporate thin‑film bias resistors, enabling inverter circuits without external input resistors. Their design reduces parasitic effects and simplifies circuit implementation.
These devices are supplied in EMT3 and VMT3 tape packages, operate from a 12 V supply, handle up to 500 mA collector current, and dissipate up to 150 mW. Key electrical parameters include a transition frequency of 260 MHz and an input resistance of 1.54 kΩ.
| Supply voltage | 12 V |
|---|---|
| Input voltage | 5 to +12 V |
| Collector current (max) | 500 mA |
| Power dissipation | 150 mW |
| Junction temperature | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Transition frequency (f_T) | 260 MHz |
| Input resistance (typ) | 1.54 kΩ |
| Resistance ratio Re/Rt (min) | 3.6 |
| Package type | EMT3, VMT3 (tape) |
The maximum collector current is 500 mA.
They operate from a 12 V supply.
The transition frequency is 260 MHz.
They are supplied in EMT3 and VMT3 tape packages.