This document describes the features and characteristics of the DTD513ZE / DTD513ZM digital transistors produced by ROHM, including lower VCE (sat), built-in bias resistors, easy device design and operation.
The DTD513ZE and DTD513ZM are low‑VEE (sat) digital transistors with built‑in thin‑film bias resistors, allowing inverter circuits without external resistors. Their structure is an NPN epitaxial planar silicon transistor and they are offered in EMT3 (SOT‑416) packaging.
The document lists the devices' absolute maximum ratings, dimensions, and detailed electrical specifications such as supply voltage, input voltage range, collector current, power dissipation, and temperature limits. A notice at the end clarifies usage restrictions and liability statements.
| Supply voltage (VCE sat) | 12 V |
|---|---|
| Input voltage range | 5 to +10 V |
| Junction temperature (Tj) | 150 °C |
| Package type | EMT3 VMT3 (SOT‑416) |
| JEITA number | SC-75A |
The devices are rated for a supply voltage of 12 V (VCE sat).
No, the products are not designed to be radiation tolerant.
They are supplied in an EMT3 VMT3 (SOT‑416) package.