This datasheet lists the information of RFM12N18, RFM12N20, RFP12N18, RFP12N20, including but not limited to product model, brand, packaging, power, voltage, RDS(ON), temperature
These N‑Channel enhancement‑mode silicon‑gate power MOSFETs are intended for switching regulators, converters, motor and relay drivers, and high‑power bipolar switching transistor drivers. They can be driven directly from integrated circuits and are sensitive to electrostatic discharge.
The document provides absolute maximum ratings, detailed electrical specifications such as drain‑source voltage, on‑resistance, gate threshold, and capacitances, as well as typical performance curves and thermal data for each part number.
| Drain‑to‑Source Voltage (VDS) max | 180 V (RFM12N18) / 200 V (RFM12N20) |
|---|---|
| Drain‑to‑Source Voltage (VDS) max | 200 V (RFM12N20 / RFP12N20) |
| On‑Resistance (RDS(on)) typical | 0.250 Ω |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.25 °C/W (RFM12N18) / 1.67 °C/W (RFP12N20) |
| Thermal Resistance Junction‑to‑Case (RθJC) for RFP12N20 | 1.67 °C/W |
The typical drain‑to‑source on‑resistance is 0.250 Ω.