This document describes the features and characteristics of ROHM EMG9 / UMG9N / FMG9A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors).
The EMG9 family (EMG9, UMG9N, FMG9A) are NPN transistors with built‑in 10 kΩ bias resistors, offered in SOT‑353, UMTS and SMT5 packages. They provide an emitter‑common configuration suitable for inverter, interface and driver circuits.
The datasheet lists absolute maximum ratings such as 50 V supply voltage and 100 mA collector current, electrical characteristics including a typical 0.3 V output voltage at 10 mA, a transition frequency up to 250 MHz, and detailed mechanical dimensions for each package.
| Supply voltage (VEE) | 50 V |
|---|---|
| Input voltage (VIN) | -10 to +40 V |
| Output current (IO) | 50 mA |
| Collector current (IC max) | 100 mA |
| Power dissipation (EMG9) | 150 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to +150 °C |
The maximum supply voltage (VEE) is 50 V.
The EMG9 is offered in EMTS (1616), UMTS (2021) and SMT5 (2928) packages.
The junction temperature rating is 150 °C.