EMB6 / UMB6N is a PNP complex digital transistor produced by ROHM company. Its maximum output current is -100mA and its maximum supply voltage is -50V. The transistor has built-in bias resistors, which do not require external input resistors to form an inverter circuit. In addition, the transistor also has a completely isolated thin-film resistor that can achieve negative bias input and completely eliminate parasitic effects.
The EMB6 and UMB6N are PNP complex digital transistors with built‑in bias resistors (Ry = Re = 47 kΩ) that simplify inverter and driver circuit designs. Features include two DTA144E chips in one package, thin‑film bias resistors for negative biasing, and RoHS compliance.
Typical applications are inverter circuits, interface circuits, and driver circuits. The devices are offered in SOT‑353 (SC‑88) and SC‑107C packages with detailed mechanical dimensions and ordering information provided in the datasheet.
| Supply voltage (Veo) | -50 V |
|---|---|
| Input voltage (Vin) | -40 V to +10 V |
| Output current (Iout) | -30 mA |
| Collector current (Ic max) | -100 mA |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Built‑in bias resistor (Ry) | 47 kΩ |
| Resistance ratio (R2/Ry) | 1 (typical) |
The built‑in bias resistors are 47 kΩ.
They are used in inverter circuits, interface circuits, and driver circuits.
Yes, they are Lead Free/RoHS compliant.
The maximum collector current is 100 mA.