UMA9N / FMA9A is a PNP-100mA-50V complex digital transistor (bias resistor built-in transistor) produced by ROHM. It has the following features: built-in bias resistor R1 = R2 = 10kW, two DTA114E chips in one package, emitter (GND) common type, inverter circuit can be configured without connecting external input resistors (see internal circuit), bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, completely eliminating parasitic effects, only on/off conditions need to be set for operation, making circuit design easy, lead free/RoHS compliant.
The ROHM UMA9N and FMA9A are complex digital transistors with built‑in biasing resistors (Ry = Re = 10kΩ) and an emitter‑common configuration. They integrate two DTA114E chips in a SOT‑353 (SC‑88A) package, offering easy inverter circuit design without external resistors and RoHS‑compliant lead‑free construction.
The document provides absolute maximum ratings, electrical characteristics, characteristic curves, and detailed mechanical dimensions for both the UMA9N and FMA9A packages, along with packaging specifications and a legal notice.
| Supply voltage (VEO) | -50 V |
|---|---|
| Input voltage (VIN) | -40 to +10 V |
| Output current (IO) | 50 mA |
| Collector current (ICmax) | -100 mA |
| Power dissipation (UMA9N) | 150 mW (total) |
| Junction temperature (TJ) | 150 °C |
| Storage temperature range | -55 to +150 °C |
| Resistance ratio (R2/Ry) | 0.8 – 1.2 |
The built‑in bias resistors are 10 kΩ (Ry = Re = 10kΩ).
Yes, the devices are Lead Free/RoHS Compliant.
Both devices are supplied in a SOT‑353 (SC‑88A) package.
The maximum power dissipation for the UMA9N is 150 mW (total).