ROHM QST8 Transistor Datasheet Rev.A

QST8 low voltage large current npn bipolar junction transistor with collector current up to -500mA and collector saturation voltage down to -200mV


ROHM QST8 Transistor Datasheet Rev.A - cover page
Brand
ROHM
Category
Other Electronics
Document type
Datasheet
Language
Chinese
Pages
3
File format
PDF
File size
64 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
E53091C69885D74A0878AC71C9AD41BC

About this manual

The QST8 is a general‑purpose amplification transistor offering a large collector current and low saturation voltage. Key electrical parameters such as VCEO, IC, hFE, and transition frequency are listed with typical and maximum values.

The document also includes packaging details, switching time data, and an appendix with usage notes, export control information, and legal notices for designers and distributors. This manual is written in Chinese.

What's inside

  • General purpose amplification
  • Features
  • Absolute maximum ratings
  • Electrical characteristics
  • Packaging specifications
  • Switching time
  • Appendix

Specifications

Collector‑emitter voltage (VCEO) max-12 V
Transition frequency (fT) typical400 MHz
DC current gain (hFE) range270‑680
Collector‑emitter saturation voltage (VCE(sat)) max-200 mV
Package codeTSMT6

Frequently asked questions

What is the transition frequency of the QST8?

The typical transition frequency (fT) is 400 MHz.

What package does the QST8 use?

The QST8 is supplied in a TSMT6 package.

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