QSZ1 is a dual-emitter transistor produced by ROHM. It is mainly used in DC/DC converters and motor drivers. It has the characteristics of low VCE(sat) and small package.
The QSZ1 is a general‑purpose silicon epitaxial planar transistor offered in a compact TSMT5 package. It is intended for DC‑DC converters and motor driver applications, featuring low VCE(sat) and a small footprint. The document lists packaging details, marking code (201), and external dimensions.
Electrical ratings include a collector‑emitter voltage of 12 V, a maximum collector current of 2 A, power dissipation up to 1.25 W, and a junction temperature limit of 150 °C. Absolute maximum ratings, typical electrical characteristics, and characteristic curves are provided for design reference.
| Collector‑emitter voltage (VCEO) | 12 V |
|---|---|
| Power dissipation (P0) | 1.25 W |
| Junction temperature (TJ) | 150 °C |
| Package | TSMT5 |
| Marking code | 201 |
The QSZ1 is rated for a collector‑emitter voltage of 12 V.
It is supplied in a TSMT5 surface‑mount package.