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The 2N7287D is a radiation‑hardened N‑channel power MOSFET offered by Harris Semiconductor. It is available in several packages (e.g., TO‑2040A) and can be supplied as a die or in other package types. The device is designed for high‑dose gamma and neutron environments, with specifications for up to 300 krad(Si) and limited use to 3000 krad(Si).
Key electrical characteristics include a drain‑source voltage rating of 250 V, a continuous drain current of 12 A, and an on‑resistance of 0.400 Ω. Additional parameters such as gate‑threshold voltage, leakage currents, and avalanche current are detailed in the specification tables, along with pre‑ and post‑radiation performance data.
| Drain‑Source Voltage (VDS) | 250 V |
|---|---|
| Continuous Drain Current (ID) | 12 A |
The device is rated for a maximum drain‑source voltage of 250 V.
It can handle a continuous drain current of 12 A.