This document describes an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
The BUZ45B is an N‑Channel enhancement mode silicon‑gate power MOSFET designed for high‑speed switching applications such as regulators, converters, motor and relay drivers. It can be driven directly from integrated circuits and offers low on‑resistance and high input impedance.
The datasheet lists absolute maximum ratings, electrical specifications, typical performance curves, and test circuit diagrams. Key parameters include a 500 V drain‑to‑source breakdown voltage, 10 A continuous drain current, and an on‑resistance of about 0.5 Ω.
The device is supplied in a JEDEC TO‑204AA (D) package.
Yes, the devices are sensitive to electrostatic discharge and proper IC handling procedures should be followed.