HARRIS BUZ45B 10A 500V 0.500 Ohm N-Channel Power MOSFET handbook

Update: 29 September, 2023

This document describes an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.


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Publication date: 10 May, 2012

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PDF Link: HARRIS BUZ45B 10A 500V 0.500 Ohm N-Channel Power MOSFET handbook PDF

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