The TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
The TSUS4400 infrared emitting diode is fabricated in GaAs on GaAs technology and packaged in a clear, blue‑tinted T‑1 (3 mm) plastic case. It is spectrally matched to silicon photodetectors and is intended for infrared remote‑control systems, reflective sensors and tape‑end detection.
The datasheet provides detailed electrical ratings such as a typical forward voltage of 1.7 V at 100 mA, a maximum forward current of 100 mA, surge capability of 2 A, and a power dissipation of 170 mW. Mechanical dimensions, thermal resistance, and extensive graphs of performance versus temperature and current are also included.
| Typical forward voltage (100 mA, 20 ms) | 1.7 V |
|---|---|
| Maximum reverse voltage | 5 V |
| Maximum forward current | 100 mA |
| Power dissipation | 170 mW |
| Junction temperature limit | 100 °C |
| Operating temperature range | -55 °C to +100 °C |
| Radiant power (100 mA, 20 ms) | 20 mW |
| Radiant intensity (100 mA, 20 ms) | 15 mW/sr |
The diode is rated for a maximum continuous forward current of 100 mA.
A soldering temperature of 260 °C for up to 5 seconds with a 2 mm distance from the case is specified.