Update: 30 September, 2023
This datasheet is about MBM29PDS322TE/BE, which is a 32M-bit, 1.8 V-only Flash memory. It is organized as 2M words of 16 bits each. The device provides 63-ball FBGA package. The device is designed to be programmed in system with standard system 1.8 V VCC supply. Write or erase operations do not require 12.0 V VPP and 5.0 V VCC. The device can also be reprogrammed in standard EPROM programmers. The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu's standard 1.8 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank.
File format: PDF
Size: -
MD5 Checksum: 889E7E47DBD8F347EA2F827F1CD8852D
Publication date: 07 May, 2012
Downloads: -
PDF Link: FUJITSU SEMICONDUCTOR MBM29PDS322TE/BE 10/11 DATA SHEET PDF