This datasheet is about MBM29PDS322TE/BE, which is a 32M-bit, 1.8 V-only Flash memory. It is organized as 2M words of 16 bits each. The device provides 63-ball FBGA package. The device is designed to be programmed in system with standard system 1.8 V VCC supply. Write or erase operations do not require 12.0 V VPP and 5.0 V VCC. The device can also be reprogrammed in standard EPROM programmers. The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu's standard 1.8 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank.
The MBM29PDS322TE/BE is a 32‑Mbit (2 M × 16) flash memory that operates from a single 1.8 V supply. It is offered in a 63‑ball plastic FBGA (BGA‑63P‑M01) package and supports simultaneous read/write operations using dual banks.
Key features include a 45 ns maximum page access time, 100 ns random access time, sector‑erase architecture with eight 4 Kword and sixty‑three 32 Kword sectors, and a minimum of 100 000 program/erase cycles. The device provides standard JEDEC‑compatible command and pin assignments and includes hardware reset, write‑protect, and ready/busy signals.
| Memory size | 32 Mbit (2 M × 16) |
|---|---|
| Package type | 63‑ball plastic FBGA (BGA‑63P‑M01) |
| Page access time | 45 ns (max) |
| Random access time | 100 ns |
| Sector organization | Eight 4 Kword + sixty‑three 32 Kword sectors |
| Program/erase endurance | ≥ 100 000 cycles |
Each page contains 4 words.
The device guarantees at least 100 000 program/erase cycles.
It is supplied in a 63‑ball plastic FBGA (BGA‑63P‑M01) package.