M29DW128F 128 Mbit flash memory
The M29DW128F is a 128 Mbit (16 Mb × 8 or 8 Mb × 16) non‑volatile flash memory that can be read, erased and reprogrammed using a single low‑voltage supply (2.7 V‑3.6 V). It features a quadruple‑bank architecture with 16 parameter blocks and 254 main blocks, allowing simultaneous programming/erasing in one bank while reading from others.
The device supports asynchronous random and page reads, offers hardware and software block protection, and is supplied in TSOP56 (14 × 20 mm) and TBGA64 (10 × 13 mm) packages. It provides up to 100 000 program/erase cycles per block and includes a 64‑bit security code.
| Memory capacity | 128 Mbit (16 Mb × 8 or 8 Mb × 16) |
|---|---|
| Supply voltage (Vcc) | 2.7 V to 3.6 V |
| I/O voltage (Vccg) | 1.65 V to 3.6 V |
| Fast‑program voltage (Vpp) | 12 V (optional) |
| Programming time per byte/word | 10 µs typical |
| Endurance | 100 000 program/erase cycles per block |
The device operates from 2.7 V to 3.6 V for programming, erasing and reading.
Each memory block is rated for 100 000 program/erase cycles.
Each page is 8 words wide.