Inchange 2SC1004 Datasheet

This document describes the product specifications and characteristics of Inchange Semiconductor's 2SC1004 Silicon NPN Power Transistors. The transistor is packaged in TO-3 and has a high breakdown voltage. It is suitable for use in the horizontal deflection output stages of color TV receivers. The main features include: collector-base breakdown voltage of 1100V, collector-emitter breakdown voltage of 700V, emitter-base breakdown voltage of 5V, maximum collector current of 0.5A, maximum power dissipation of 50W, and operating temperature range of -55°C to 150°C.


Inchange 2SC1004 Datasheet - cover page
Brand
INCHANGE
Category
Transistor
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
128 KB
Published
04 May, 2012
Updated
29 September, 2023
MD5 checksum
6BF6EBE0600C1BC4DBF141EAEE07AB07

About this manual

The 2SC1004 is a silicon NPN power transistor supplied in a TO‑3 metal case. It is intended for high‑voltage applications such as the horizontal deflection output stages of color TV receivers. The device features a high breakdown voltage and a simple three‑pin layout (Base, Emitter, Collector).

Key electrical characteristics include a collector‑base voltage of 1100 V, collector‑emitter voltage of 700 V, and a maximum collector current of 0.5 A. The transistor can dissipate up to 50 W at 25 °C, with a junction temperature rating of 150 °C and a storage temperature range of –55 °C to 150 °C. Additional parameters such as saturation voltages, DC current gain, and transition frequency are also listed.

What's inside

  • Product Specification
  • Description
  • Applications
  • Pinning
  • Absolute Maximum Ratings
  • Characteristics
  • Package Outline

Specifications

Collector‑base voltage (Vebo)1100 V
Collector‑emitter voltage (Veeo)700 V
Emitter‑base voltage (VeBo)5 V
Collector current (Ic)0.5 A
Total power dissipation (Pr)50 W
Junction temperature (Tj)150 °C
Storage temperature (Tstg)-55~150 °C
Collector‑emitter sustaining voltage (Vce(sus))700 V
Emitter‑base breakdown voltage5 V
Collector‑emitter saturation voltage (Vcesat)5.0 V
Base‑emitter saturation voltage (Vbesat)1.5 V
DC current gain (hFE)30‑160
Transition frequency (ft)2.0 MHz

Frequently asked questions

What is the maximum collector‑emitter voltage for the 2SC1004?

The maximum collector‑emitter voltage is 700 V.

What package type does the 2SC1004 use?

It is supplied in a TO‑3 metal package.

What are the pin assignments of the 2SC1004?

Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.

What is the maximum power dissipation rating?

The transistor can dissipate up to 50 W at a case temperature of 25 °C.

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